low capacitance quad array for esd protection description general description features this integrated transient voltage suppressor device (tvs) is designed for applications requiring transient overvoltage protection, printers, business machines, communication systems, medical equipment, and other applications. its integrated design provides very effective and reliable protection for separate lines using only one package. these devices are ideal for situations where board space is at a premium. z four separate unidirectional configurations for protection z low leakage current < 1 a @ 3volts z power dissipation: 380mw z small sot-353 smt package z low cap a citance z complies to usb 1.1 low speed & speed specifications z these are pb-free devices applications complies with the following standards z serial and parallel ports z microprocessor based equipment iec61000-4-2 z notebooks, desktops, servers level 4 15 kv (air discharge) z cellular and portable equipment 8 kv(contact discharge) mil std 883e - method 3 015-7 clas s 3 25 kv hbm (human body model) functional diagram sot-353 maximum ratings (t a =25c) symbol parameter value units 30 w p peak power dissipation( 820s@t =25 ) pk a p steady state power-1 diode 380 mw d thermal resistance, junction-to-ambient 327 /w r ja 3.05 above 2 5, derate mw / t maximum junction temperature 150 jmax t j t operation junction and storage temperature range -55 to +150 stg t lead solder temperature(10 seconds duration) 260 l z 2012-0 willas electronic corp. type number marking code SEMF3V3LC vb marking
electrical parameter symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm i t test current v br breakdown voltage @ i t i f forward current v f forward voltage @ i f electrical characteristics v br v f c part numbers typ. 0v bias v i i i t rwm r f min. typ. max. max. v v v ma v a v ma pf 5.3 5.6 5.88 1 3.3 1.0 1.25 200 28 SEMF3V3LC 1. non-repetitive current per figure 1. 2. only 1 diode under power. for 4 diodes under power 3. capacitance of one diode at f=1mhz,t a =25 typical characteristics figure 1 pulse width figure 2 power derating curve 2012-0 willas electronic corp. low capacitance quad array for esd protection description
figure 3 reverse leakage versus temperature figure 4 capacitance figure 5 8*20 pulse waveform figure 6 forward voltage sot-353 mechanical data 2012-0 willas electronic corp. low capacitance quad array for esd protection description dimensions in inches and (millimeters) 0.50 bsc .020 bsc . 0 4 5 ( 1 . 1 5 ) . 0 5 3 ( 1 . 3 5 ) ( 1 . 3 0 t y p . ) . 0 5 t y p . . 0 7 1 ( 1 . 8 0 ) . 0 8 6 ( 2 . 2 0 ) . 0 7 1 ( 1 . 8 0 ) . 0 9 6 ( 2 . 4 5 ) . 0 0 4 ( 0 . 1 0 ) . 0 1 8 ( 0 . 4 6 ) . 0 0 4 ( 0 . 0 8 ) . 0 0 7 ( 0 . 1 8 ) .031(0.80) .039(1.00) .031(0.80) .043(1.10) .006(0.15) .014(0.35) .031(0.80) .039(1.00)
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